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Growth temperature dependence of transport properties of InAs epilayers grown on GaP

Identifieur interne : 011D17 ( Main/Repository ); précédent : 011D16; suivant : 011D18

Growth temperature dependence of transport properties of InAs epilayers grown on GaP

Auteurs : RBID : Pascal:00-0343727

Descripteurs français

Pascal (Inist)
- 7361E, 7280E, 8105E, 8115H, 7220E, 7220M, 7350J, 6172F, 6172L, 7220J, Etude expérimentale, Indium composé, Semiconducteur III-V, Couche épitaxique semiconductrice, Gallium composé, Epitaxie jet moléculaire, Croissance semiconducteur, Mobilité Hall, Résistivité électrique, Densité porteur charge, TEM, Structure dislocation.

English descriptors

KwdEn :
- Carrier density, Dislocation structure, Electrical resistivity, Experimental study, Gallium compounds, Hall mobility, III-V semiconductors, Indium compounds, Molecular beam epitaxy, Semiconductor epitaxial layers, Semiconductor growth, TEM.

Abstract

Undoped InAs was grown by molecular-beam epitaxy directly on GaP at a set of different substrate temperatures. Transport properties were characterized by means of Hall-effect and resistivity measurements at temperatures between 3 and 300 K. It was observed that samples grown at higher temperatures had lower carrier concentrations, consistent with a decrease of ionized defects. In addition, samples grown at higher temperatures also had higher mobility, consistent with a smaller number of scattering centers. Samples grown at higher temperatures also showed much higher sensitivity of the mobility to the measurement temperature, suggesting a drop in neutral scattering defects. Transmission electron microscopy showed that the samples grown at higher temperatures had a significantly different dislocation microstructure. The observed dislocation microstructure is consistent with the mechanisms proposed for the influence of growth temperature on the variation of carrier concentration and mobility. © 2000 American Institute of Physics.

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Le document en format XML

<record><TEI><teiHeader><fileDesc><titleStmt><title xml:lang="en" level="a">Growth temperature dependence of transport properties of InAs epilayers grown on GaP</title>
<author><name sortKey="Souw, Victor" uniqKey="Souw V">Victor Souw</name>
<affiliation wicri:level="2"><inist:fA14 i1="01"><s1>Department of Physics, Purdue University, West Lafayette, Indiana 47907</s1>
<sZ>1 aut.</sZ>
<sZ>2 aut.</sZ>
<sZ>3 aut.</sZ>
<sZ>6 aut.</sZ>
</inist:fA14>
<country xml:lang="fr">États-Unis</country>
<placeName><region type="state">Indiana</region>
</placeName>
<wicri:cityArea>Department of Physics, Purdue University, West Lafayette</wicri:cityArea>
</affiliation>
<affiliation wicri:level="2"><inist:fA14 i1="02"><s1>School of Materials Engineering, Purdue University, West Lafayette, Indiana 47907</s1>
</inist:fA14>
<country xml:lang="fr">États-Unis</country>
<placeName><region type="state">Indiana</region>
</placeName>
<wicri:cityArea>School of Materials Engineering, Purdue University, West Lafayette</wicri:cityArea>
</affiliation>
<affiliation wicri:level="2"><inist:fA14 i1="03"><s1>Department of Electrical Engineering, Yale University, New Haven, Connecticut 06520</s1>
</inist:fA14>
<country xml:lang="fr">États-Unis</country>
<placeName><region type="state">Connecticut</region>
</placeName>
<wicri:cityArea>Department of Electrical Engineering, Yale University, New Haven</wicri:cityArea>
</affiliation>
<affiliation wicri:level="2"><inist:fA14 i1="05"><s1>Department of Electrical Engineering, Yale University, New Haven, Connecticut 06520</s1>
</inist:fA14>
<country xml:lang="fr">États-Unis</country>
<placeName><region type="state">Connecticut</region>
</placeName>
<wicri:cityArea>Department of Electrical Engineering, Yale University, New Haven</wicri:cityArea>
</affiliation>
</author>
<author><name sortKey="Gopal, V" uniqKey="Gopal V">V. Gopal</name>
<affiliation wicri:level="2"><inist:fA14 i1="01"><s1>Department of Physics, Purdue University, West Lafayette, Indiana 47907</s1>
<sZ>1 aut.</sZ>
<sZ>2 aut.</sZ>
<sZ>3 aut.</sZ>
<sZ>6 aut.</sZ>
</inist:fA14>
<country xml:lang="fr">États-Unis</country>
<placeName><region type="state">Indiana</region>
</placeName>
<wicri:cityArea>Department of Physics, Purdue University, West Lafayette</wicri:cityArea>
</affiliation>
</author>
<author><name sortKey="Chen, E H" uniqKey="Chen E">E.-H. Chen</name>
<affiliation wicri:level="2"><inist:fA14 i1="01"><s1>Department of Physics, Purdue University, West Lafayette, Indiana 47907</s1>
<sZ>1 aut.</sZ>
<sZ>2 aut.</sZ>
<sZ>3 aut.</sZ>
<sZ>6 aut.</sZ>
</inist:fA14>
<country xml:lang="fr">États-Unis</country>
<placeName><region type="state">Indiana</region>
</placeName>
<wicri:cityArea>Department of Physics, Purdue University, West Lafayette</wicri:cityArea>
</affiliation>
</author>
<author><name sortKey="Kvam, E P" uniqKey="Kvam E">E. P. Kvam</name>
</author>
<author><name sortKey="Mcelfresh, M" uniqKey="Mcelfresh M">M. Mcelfresh</name>
</author>
<author><name sortKey="Woodall, J M" uniqKey="Woodall J">J. M. Woodall</name>
<affiliation wicri:level="2"><inist:fA14 i1="01"><s1>Department of Physics, Purdue University, West Lafayette, Indiana 47907</s1>
<sZ>1 aut.</sZ>
<sZ>2 aut.</sZ>
<sZ>3 aut.</sZ>
<sZ>6 aut.</sZ>
</inist:fA14>
<country xml:lang="fr">États-Unis</country>
<placeName><region type="state">Indiana</region>
</placeName>
<wicri:cityArea>Department of Physics, Purdue University, West Lafayette</wicri:cityArea>
</affiliation>
</author>
</titleStmt>
<publicationStmt><idno type="inist">00-0343727</idno>
<date when="2000-08-21">2000-08-21</date>
<idno type="stanalyst">PASCAL 00-0343727 AIP</idno>
<idno type="RBID">Pascal:00-0343727</idno>
<idno type="wicri:Area/Main/Corpus">012A34</idno>
<idno type="wicri:Area/Main/Repository">011D17</idno>
</publicationStmt>
<seriesStmt><idno type="ISSN">0003-6951</idno>
<title level="j" type="abbreviated">Appl. phys. lett.</title>
<title level="j" type="main">Applied physics letters</title>
</seriesStmt>
</fileDesc>
<profileDesc><textClass><keywords scheme="KwdEn" xml:lang="en"><term>Carrier density</term>
<term>Dislocation structure</term>
<term>Electrical resistivity</term>
<term>Experimental study</term>
<term>Gallium compounds</term>
<term>Hall mobility</term>
<term>III-V semiconductors</term>
<term>Indium compounds</term>
<term>Molecular beam epitaxy</term>
<term>Semiconductor epitaxial layers</term>
<term>Semiconductor growth</term>
<term>TEM</term>
</keywords>
<keywords scheme="Pascal" xml:lang="fr"><term>7361E</term>
<term>7280E</term>
<term>8105E</term>
<term>8115H</term>
<term>7220E</term>
<term>7220M</term>
<term>7350J</term>
<term>6172F</term>
<term>6172L</term>
<term>7220J</term>
<term>Etude expérimentale</term>
<term>Indium composé</term>
<term>Semiconducteur III-V</term>
<term>Couche épitaxique semiconductrice</term>
<term>Gallium composé</term>
<term>Epitaxie jet moléculaire</term>
<term>Croissance semiconducteur</term>
<term>Mobilité Hall</term>
<term>Résistivité électrique</term>
<term>Densité porteur charge</term>
<term>TEM</term>
<term>Structure dislocation</term>
</keywords>
</textClass>
</profileDesc>
</teiHeader>
<front><div type="abstract" xml:lang="en">Undoped InAs was grown by molecular-beam epitaxy directly on GaP at a set of different substrate temperatures. Transport properties were characterized by means of Hall-effect and resistivity measurements at temperatures between 3 and 300 K. It was observed that samples grown at higher temperatures had lower carrier concentrations, consistent with a decrease of ionized defects. In addition, samples grown at higher temperatures also had higher mobility, consistent with a smaller number of scattering centers. Samples grown at higher temperatures also showed much higher sensitivity of the mobility to the measurement temperature, suggesting a drop in neutral scattering defects. Transmission electron microscopy showed that the samples grown at higher temperatures had a significantly different dislocation microstructure. The observed dislocation microstructure is consistent with the mechanisms proposed for the influence of growth temperature on the variation of carrier concentration and mobility. © 2000 American Institute of Physics.</div>
</front>
</TEI>
<inist><standard h6="B"><pA><fA01 i1="01" i2="1"><s0>0003-6951</s0>
</fA01>
<fA02 i1="01"><s0>APPLAB</s0>
</fA02>
<fA03 i2="1"><s0>Appl. phys. lett.</s0>
</fA03>
<fA05><s2>77</s2>
</fA05>
<fA06><s2>8</s2>
</fA06>
<fA08 i1="01" i2="1" l="ENG"><s1>Growth temperature dependence of transport properties of InAs epilayers grown on GaP</s1>
</fA08>
<fA11 i1="01" i2="1"><s1>SOUW (Victor)</s1>
</fA11>
<fA11 i1="02" i2="1"><s1>GOPAL (V.)</s1>
</fA11>
<fA11 i1="03" i2="1"><s1>CHEN (E.-H.)</s1>
</fA11>
<fA11 i1="04" i2="1"><s1>KVAM (E. P.)</s1>
</fA11>
<fA11 i1="05" i2="1"><s1>MCELFRESH (M.)</s1>
</fA11>
<fA11 i1="06" i2="1"><s1>WOODALL (J. M.)</s1>
</fA11>
<fA14 i1="01"><s1>Department of Physics, Purdue University, West Lafayette, Indiana 47907</s1>
<sZ>1 aut.</sZ>
<sZ>2 aut.</sZ>
<sZ>3 aut.</sZ>
<sZ>6 aut.</sZ>
</fA14>
<fA14 i1="02"><s1>School of Materials Engineering, Purdue University, West Lafayette, Indiana 47907</s1>
</fA14>
<fA14 i1="03"><s1>Department of Electrical Engineering, Yale University, New Haven, Connecticut 06520</s1>
</fA14>
<fA14 i1="04"><s1>School of Materials Engineering, Purdue University, West Lafayette, Indiana 47907</s1>
<sZ>4 aut.</sZ>
<sZ>5 aut.</sZ>
</fA14>
<fA14 i1="05"><s1>Department of Electrical Engineering, Yale University, New Haven, Connecticut 06520</s1>
</fA14>
<fA20><s1>1176-1178</s1>
</fA20>
<fA21><s1>2000-08-21</s1>
</fA21>
<fA23 i1="01"><s0>ENG</s0>
</fA23>
<fA43 i1="01"><s1>INIST</s1>
<s2>10020</s2>
</fA43>
<fA44><s0>8100</s0>
<s1>© 2000 American Institute of Physics. All rights reserved.</s1>
</fA44>
<fA47 i1="01" i2="1"><s0>00-0343727</s0>
</fA47>
<fA60><s1>P</s1>
</fA60>
<fA61><s0>A</s0>
</fA61>
<fA64 i1="01" i2="1"><s0>Applied physics letters</s0>
</fA64>
<fA66 i1="01"><s0>USA</s0>
</fA66>
<fC01 i1="01" l="ENG"><s0>Undoped InAs was grown by molecular-beam epitaxy directly on GaP at a set of different substrate temperatures. Transport properties were characterized by means of Hall-effect and resistivity measurements at temperatures between 3 and 300 K. It was observed that samples grown at higher temperatures had lower carrier concentrations, consistent with a decrease of ionized defects. In addition, samples grown at higher temperatures also had higher mobility, consistent with a smaller number of scattering centers. Samples grown at higher temperatures also showed much higher sensitivity of the mobility to the measurement temperature, suggesting a drop in neutral scattering defects. Transmission electron microscopy showed that the samples grown at higher temperatures had a significantly different dislocation microstructure. The observed dislocation microstructure is consistent with the mechanisms proposed for the influence of growth temperature on the variation of carrier concentration and mobility. © 2000 American Institute of Physics.</s0>
</fC01>
<fC02 i1="01" i2="3"><s0>001B70C61E</s0>
</fC02>
<fC02 i1="02" i2="3"><s0>001B70B80E</s0>
</fC02>
<fC02 i1="03" i2="3"><s0>001B80A05H</s0>
</fC02>
<fC02 i1="04" i2="3"><s0>001B80A15H</s0>
</fC02>
<fC02 i1="05" i2="3"><s0>001B70B20E</s0>
</fC02>
<fC02 i1="06" i2="3"><s0>001B70B20M</s0>
</fC02>
<fC02 i1="07" i2="3"><s0>001B70C50J</s0>
</fC02>
<fC02 i1="08" i2="3"><s0>001B60A72F</s0>
</fC02>
<fC02 i1="09" i2="3"><s0>001B60A72L</s0>
</fC02>
<fC02 i1="10" i2="3"><s0>001B70B20J</s0>
</fC02>
<fC03 i1="01" i2="3" l="FRE"><s0>7361E</s0>
<s2>PAC</s2>
<s4>INC</s4>
</fC03>
<fC03 i1="02" i2="3" l="FRE"><s0>7280E</s0>
<s2>PAC</s2>
<s4>INC</s4>
</fC03>
<fC03 i1="03" i2="3" l="FRE"><s0>8105E</s0>
<s2>PAC</s2>
<s4>INC</s4>
</fC03>
<fC03 i1="04" i2="3" l="FRE"><s0>8115H</s0>
<s2>PAC</s2>
<s4>INC</s4>
</fC03>
<fC03 i1="05" i2="3" l="FRE"><s0>7220E</s0>
<s2>PAC</s2>
<s4>INC</s4>
</fC03>
<fC03 i1="06" i2="3" l="FRE"><s0>7220M</s0>
<s2>PAC</s2>
<s4>INC</s4>
</fC03>
<fC03 i1="07" i2="3" l="FRE"><s0>7350J</s0>
<s2>PAC</s2>
<s4>INC</s4>
</fC03>
<fC03 i1="08" i2="3" l="FRE"><s0>6172F</s0>
<s2>PAC</s2>
<s4>INC</s4>
</fC03>
<fC03 i1="09" i2="3" l="FRE"><s0>6172L</s0>
<s2>PAC</s2>
<s4>INC</s4>
</fC03>
<fC03 i1="10" i2="3" l="FRE"><s0>7220J</s0>
<s2>PAC</s2>
<s4>INC</s4>
</fC03>
<fC03 i1="11" i2="3" l="FRE"><s0>Etude expérimentale</s0>
</fC03>
<fC03 i1="11" i2="3" l="ENG"><s0>Experimental study</s0>
</fC03>
<fC03 i1="12" i2="3" l="FRE"><s0>Indium composé</s0>
</fC03>
<fC03 i1="12" i2="3" l="ENG"><s0>Indium compounds</s0>
</fC03>
<fC03 i1="13" i2="3" l="FRE"><s0>Semiconducteur III-V</s0>
</fC03>
<fC03 i1="13" i2="3" l="ENG"><s0>III-V semiconductors</s0>
</fC03>
<fC03 i1="14" i2="3" l="FRE"><s0>Couche épitaxique semiconductrice</s0>
</fC03>
<fC03 i1="14" i2="3" l="ENG"><s0>Semiconductor epitaxial layers</s0>
</fC03>
<fC03 i1="15" i2="3" l="FRE"><s0>Gallium composé</s0>
</fC03>
<fC03 i1="15" i2="3" l="ENG"><s0>Gallium compounds</s0>
</fC03>
<fC03 i1="16" i2="3" l="FRE"><s0>Epitaxie jet moléculaire</s0>
</fC03>
<fC03 i1="16" i2="3" l="ENG"><s0>Molecular beam epitaxy</s0>
</fC03>
<fC03 i1="17" i2="3" l="FRE"><s0>Croissance semiconducteur</s0>
</fC03>
<fC03 i1="17" i2="3" l="ENG"><s0>Semiconductor growth</s0>
</fC03>
<fC03 i1="18" i2="3" l="FRE"><s0>Mobilité Hall</s0>
</fC03>
<fC03 i1="18" i2="3" l="ENG"><s0>Hall mobility</s0>
</fC03>
<fC03 i1="19" i2="3" l="FRE"><s0>Résistivité électrique</s0>
</fC03>
<fC03 i1="19" i2="3" l="ENG"><s0>Electrical resistivity</s0>
</fC03>
<fC03 i1="20" i2="3" l="FRE"><s0>Densité porteur charge</s0>
</fC03>
<fC03 i1="20" i2="3" l="ENG"><s0>Carrier density</s0>
</fC03>
<fC03 i1="21" i2="3" l="FRE"><s0>TEM</s0>
</fC03>
<fC03 i1="21" i2="3" l="ENG"><s0>TEM</s0>
</fC03>
<fC03 i1="22" i2="3" l="FRE"><s0>Structure dislocation</s0>
</fC03>
<fC03 i1="22" i2="3" l="ENG"><s0>Dislocation structure</s0>
</fC03>
<fN21><s1>234</s1>
</fN21>
<fN47 i1="01" i2="1"><s0>0033M000113</s0>
</fN47>
</pA>
</standard>
</inist>
</record>

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Growth temperature dependence of transport properties of InAs epilayers grown on GaP

Growth temperature dependence of transport properties of InAs epilayers grown on GaP

Descripteurs français

English descriptors

Abstract

Links toward previous steps (curation, corpus...)

Links to Exploration step

Le document en format XML

Pour manipuler ce document sous Unix (Dilib)

Pour mettre un lien sur cette page dans le réseau Wicri